Nanofabrication service

Dry etching - Reactive Ion Etching and Inductively Coupled Plasma Etching

Reactive Ion Etching (RIE)

Our metal and non-metal RIE tools are typically used to etch polymer, dielectric or semiconductor layers, remove photoresists, and clean or de-scum samples.

Their horizontal table is fit for use with small samples of wafers up to 200 mm and their small vacuum chamber takes only seconds to reach base pressure when backed by a roots/rotary pump. These features make them popular with users working in all areas of the cleanroom.

Inductively Coupled Plasma Etching (ICP)

Our ICP tools are an OIPT SYS380 based ICP etcher that has been equipped with gases that are intended for metal etch/dielectric etch use. It works in a similar fashion to the RIE tools but is more complicated internally and its etching processes have greater tuneability.

ICT tools features:

• Temperature controlled sample stage (metal/dielectric ICP)
• Selectable wavelength OES end point detection
• 980 nm laser interferometer end point detection (dielectric ICP)
• Adaptive pressure controller (APC) (metal/dielectric ICP)
• 1.8 - 2.2 MHz 3 kW remote plasma RF generator (metal/dielectric ICP)
• Electromagnetic plasma confinement with 300 W 13.56 MHz RF platen generator for DC bias (metal/dielectric ICP)

Both ICP tools can accept 150-200 mm wafers (via manual adjustment) and includes a load lock mechanism to minimise chamber pumping time and contamination.